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MT3S113P - Silicon-Germanium NPN Epitaxial Planar Type Transistor

Datasheet Summary

Features

  • Low Noise Figure:NF = 1.15dB (typ. ) (@ f=1GHz).
  • High Gain:|S21e|2 = 10.5dB (typ. ) (@ f=1GHz) Marking R7 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Pw-Mini JEDEC - JEITA SC-62.

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Datasheet Details

Part number MT3S113P
Manufacturer Toshiba Semiconductor
File Size 223.15 KB
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
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TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz) • High Gain:|S21e|2 = 10.5dB (typ.) (@ f=1GHz) Marking R7 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Pw-Mini JEDEC - JEITA SC-62 TOSHIBA 2-5K1A Weight : 0.05 g ( typ.) Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCES 13 V VCEO 5.3 V VEBO 0.6 V IC 100 mA IB 10 mA PC(Note1) 1.6 W Tj 150 °C Tstg −55 to 150 °C Note1:The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.
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