MT3S113P Overview
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit:.
MT3S113P Key Features
- Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz)
- High Gain:|S21e|2 = 10.5dB (typ.) (@ f=1GHz)