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MT3S113 - Silicon-Germanium NPN Epitaxial Planar Type Transistor

Datasheet Summary

Features

  • Low Noise Figure:NF=1.15dB (typ. ) (@ f=1GHz).
  • High Gain:|S21e|2=11.8dB (typ. ) (@ f=1GHz) Marking R7 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit S-Mini JEDEC TO-236 JEITA SC-59.

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Datasheet Details

Part number MT3S113
Manufacturer Toshiba Semiconductor
File Size 242.79 KB
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
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TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications MT3S113 Unit: mm FEATURES • Low Noise Figure:NF=1.15dB (typ.) (@ f=1GHz) • High Gain:|S21e|2=11.8dB (typ.) (@ f=1GHz) Marking R7 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range VCES 13 V VCEO 5.3 V VEBO 0.
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