Download MT3S113 Datasheet PDF
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MT3S113 Description

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications MT3S113 Unit:.

MT3S113 Key Features

  • Low Noise Figure:NF=1.15dB (typ.) (@ f=1GHz)
  • High Gain:|S21e|2=11.8dB (typ.) (@ f=1GHz)