MT3S113
Key Features
- Low Noise Figure:NF=1.15dB (typ.) (@ f=1GHz)
- High Gain:|S21e|2=11.8dB (typ.) (@ f=1GHz)
- Part: MT3S113
- Description: Silicon-Germanium NPN Epitaxial Planar Type Transistor
- Category: Transistor
- Manufacturer: Toshiba
- Size: 242.79 KB