MT3S111 Overview
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications.
MT3S111 Key Features
- Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz)
- High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz)