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MT3S111 - Silicon-Germanium NPN Epitaxial Planar Type Transistor

Datasheet Summary

Features

  • Low-Noise Figure: NF=0.9 dB (typ. ) (@ f=1 GHz).
  • High Gain:|S21e|2=12 dB (typ. ) (@ f=1 GHz) MT3S111 Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Collector power dissipation Junction temperature Storage temperature range Symbol VCES VCEO VEBO IC IB PC PC (Note 1) Tj Tstg Rating 13 6 0.6 100 10 160 700 150.

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Datasheet Details

Part number MT3S111
Manufacturer Toshiba Semiconductor
File Size 290.31 KB
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
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TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features • Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) MT3S111 Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Collector power dissipation Junction temperature Storage temperature range Symbol VCES VCEO VEBO IC IB PC PC (Note 1) Tj Tstg Rating 13 6 0.6 100 10 160 700 150 −55 to 150 Unit V V V mA mA mW mW °C °C 1. Base 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.
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