MT3S11T - Silicon NPN Epitaxial Planar Type Transistor

Toshiba

Datasheet Details

Part number	MT3S11T
Manufacturer	Toshiba
File Size	126.86 KB
Description	Silicon NPN Epitaxial Planar Type Transistor
Datasheet	MT3S11T Datasheet

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11T VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • Superior performance in oscillator applications. • Superior noise characteristics : NF = 2.4 dB, |S21e|2 = 3.5 dB (f = 2 GHz) MT3S11T Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector- base voltage Collector- emitter voltage Emitter- base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 13 6 1 40 10 100 125 −55~125 Unit V V V mA mW mW °C °C TESM 1.Base 2.Emitter 3.Collector JEDEC ― JEITA ― TOSHIBA 2-1B1A Weight: 0.0022g (typ.) Note: Using continuously under heavy loads (e.g.