MT3S111P Overview
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications.
MT3S111P Key Features
- Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz)
- High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz)