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MT3S111P - Silicon-Germanium NPN Epitaxial Planar Type Transistor

Datasheet Summary

Features

  • Low-Noise Figure: NF=0.95 dB (typ. ) (@f=1 GHz).
  • High Gain: |S21e|2=10.5 dB (typ. ) (@f=1 GHz) Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit PW-Mini JEDEC ⎯ JEITA SC-62.

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Datasheet Details

Part number MT3S111P
Manufacturer Toshiba Semiconductor
File Size 200.39 KB
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
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TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features • Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) • High Gain: |S21e|2=10.5 dB (typ.) (@f=1 GHz) Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit PW-Mini JEDEC ⎯ JEITA SC-62 TOSHIBA 2-5K1A Weight:0.05 g (typ.) Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Collector power dissipation Junction temperature Storage temperature range VCES 13 V VCEO 6 V VEBO 0.
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