MT3S111TU Overview
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application.
MT3S111TU Key Features
- Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz)
- High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz)