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MT3S111TU - Silicon-Germanium NPN Epitaxial Planar Type Transistor

Key Features

  • Low-Noise Figure: NF=0.85 dB (typ. ) (@ f=1 GHz).
  • High Gain: |S21e|2=12.5 dB (typ. ) (@ f=1 GHz) 2.0±0.1 0.65±0.05 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 0.166±0.05 0.7±0.05 Marking 3 R5 1 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit 1. BASE 2.

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Datasheet Details

Part number MT3S111TU
Manufacturer Toshiba
File Size 355.03 KB
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
Datasheet download datasheet MT3S111TU Datasheet

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TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Features • Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) • High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz) 2.0±0.1 0.65±0.05 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 0.166±0.05 0.7±0.05 Marking 3 R5 1 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit 1. BASE 2. EMITTER 3. COLLECTOR UFM JEDEC - JEITA - TOSHIBA 2-2U1B Weight: 6.6 mg (typ.) Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range VCES 13 V VCEO 6 V VEBO 0.