• Part: MT3S36T
  • Description: TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
  • Manufacturer: Toshiba
  • Size: 148.17 KB
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Datasheet Summary

.. TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm Features - - Low Noise Figure :NF=1.3dB (@f=2GHz) High Gain:|S21e| =12.5dB (@f=2GHz) Marking Q3 1 2 TESM JEDEC ― ― 2-1B1A Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.5 1.5 36 18 100 150 - 55~150 Unit V V V mA mA mW °C °C JEITA TOSHIBA Weight:0.0022g (typ.) 2002-08-19 .. Micro...