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Toshiba Electronic Components Datasheet

RN2426 Datasheet

PNP EPITAXIAL TYPE (SWITCHING/ INVERTER CIRCUIT/ INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS)

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RN2421~RN2427
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2421,RN2422,RN2423,RN2424
RN2425,RN2426,RN2427
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l High current type (IC(MAX) = 800mA)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Low VCE (sat)
l Complementary to RN1421~RN1427
Equivalent Circuit and Bias Resistor Values
Type No. R1 (k) R2 (k)
RN2421
RN2422
RN2423
RN2424
RN2425
RN2426
RN2427
1
2.2
4.7
10
0.47
1
2.2
1
2.2
4.7
10
10
10
10
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2421~2427
RN2421~2424
RN2425, 2426
RN2427
RN2421~2427
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Rating
50
50
10
5
6
800
200
150
55~150
JEDEC
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Unit
V
V
V
mA
mW
°C
°C
1 2001-11-29


Toshiba Electronic Components Datasheet

RN2426 Datasheet

PNP EPITAXIAL TYPE (SWITCHING/ INVERTER CIRCUIT/ INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS)

No Preview Available !

Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current RN2421~2427
Emitter cut-off current
DC current gain
Collector-Emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output
capacitance
Input resistor
Resistor ratio
RN2421
RN2422
RN2423
RN2424
RN2425
RN2426
RN2427
RN2421
RN2422
RN2423
RN2424
RN2425
RN2426
RN2427
RN2421
RN2422~2427
RN2421
RN2422
RN2423
RN2424
RN2425
RN2426
RN2427
RN2421~2424
RN2425, 2426
RN2427
RN2421~2427
RN2421~2427
RN2421
RN2422
RN2423
RN2424
RN2425
RN2426
RN2427
RN2421~2424
RN2425
RN2426
RN2427
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
R1
R1/R2
Test
Circuit
Test Condition
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 10V, IC = 0
VEB = 5V, IC = 0
VEB = 6V, IC = 0
VICC=E
= 1V,
100mA
IC = 50mA, IB = 2mA
IC = 50mA, IB = 1mA
VCE = 0.2V
IC = 100mA
VICC=E
= 5V,
0.1mA
VCE = 5V, IC = 20mA
Vf =CB1M=Hz10V, IE = 0
――
RN2421~RN2427
Min Typ. Max Unit
― ― −100 nA
― ― −500
3.85 ― −7.14
1.75 ― −3.25
0.82 ― −1.52
0.38 ― −0.71 mA
0.365 ― −0.682
0.35 ― −0.65
0.378 ― −0.703
60 ― ―
65 ― ―
70 ― ―
90 ― ―
90 ― ―
90 ― ―
90 ― ―
― ― −0.25 V
1.0
1.4
2.0
3.0
0.6
0.7
1.0
0.8
0.4
0.5
― −3.5
― −4.5
― −6.5
― −12.0 V
― −2.0
― −2.5
― −3.0
― −1.3
― −0.8
V
― −1.0
200 MHz
13 pF
0.7
1.54
3.29
7
0.329
0.7
1.54
0.9
0.0423
0.09
0.2
1.0
2.2
4.7
10
0.47
1.0
2.2
1.0
0.047
0.1
0.22
1.3
2.86
6.11
13
0.61
1.3
2.86
1.1
0.0517
0.11
0.24
k
2 2001-11-29


Part Number RN2426
Description PNP EPITAXIAL TYPE (SWITCHING/ INVERTER CIRCUIT/ INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS)
Maker Toshiba Semiconductor
Total Page 8 Pages
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RN2426 Datasheet PDF

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