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Toshiba Electronic Components Datasheet

RN2909 Datasheet

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

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RN2909 pdf
RN2907~RN2909
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2907,RN2908,RN2909
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
l Including two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1907~1909
Equivalent Circuit and Bias Resistor Values
Type No.
RN2907
RN2908
RN2909
R1 (k)
10
22
47
R2 (k)
47
47
22
JEDEC
EIAJ
TOSHIBA
Weight: 6.8 mg

2-2J1A
Equivalent Circuit (Top View)
000707EAA1
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
· The information contained herein is subject to change without notice.
2001-02-08 1/5


Toshiba Electronic Components Datasheet

RN2909 Datasheet

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

No Preview Available !

RN2909 pdf
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* : Total rating
RN2907~2909
RN2907
RN2908
RN2909
RN2907~2909
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
Rating
50
50
6
7
15
100
200
150
55~150
Unit
V
V
V
mA
mW
°C
°C
RN2907~RN2909
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off
current
Emitter cut-off
current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation
frequency
Collector output
capacitance
Input resistor
Resistor ratio
RN2907~2909
RN2907
RN2908
RN2909
RN2907
RN2908
RN2909
RN2907~2909
RN2907
RN2908
RN2909
RN2907
RN2908
RN2909
RN2907~2909
RN2907~2909
RN2907
RN2908
RN2909
RN2907
RN2908
RN2909
Symbol
ICBO
ICEO
IEBO
hFE
Test
Circuit
Test Condition
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VEB = 7V, IC = 0
VEB = 15V, IC = 0
VCE = 5V, IC = 10mA
VCE (sat) IC = 5mA, IB = 0.25mA
VI (ON)
VI (OFF)
VCE = 0.2V, IC = 5mA
VCE = 5V, IC = 0.1mA
fT
Cob
R1
R1/R2
VCE = 10V, IC = 5mA
VCB = 10V, IE = 0,
f = 1MHz
――
――
Min Typ. Max Unit
― ― −100 nA
― ― −500 nA
0.081
0.15
0.078 ― −0.145 mA
0.167 ― −0.311
80 ― ―
80 ― ― ―
70 ― ―
― −0.1 0.3 V
0.7 ― −1.8
1.0 ― −2.6 V
2.2 ― −5.8
0.5 ― −1.0
0.6
― −1.16
V
1.5 ― −2.6
200 MHz
3
6
7
15.4
32.9
0.191
0.421
1.92
10
22
47
0.213
0.468
2.14
13
28.6
61.1
0.232
0.515
2.35
pF
k
2001-02-08 2/5


Part Number RN2909
Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Maker Toshiba Semiconductor
Total Page 5 Pages
PDF Download
RN2909 pdf
RN2909 Datasheet PDF
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