SM25JZ51 Key Features
- Repetitive Peak Off−State Voltage : VDRM = 400, 600V
- R.M.S On−State Current
- High mutating (dv / dt)
- Isolation Voltage : IT (RMS) = 25A : (dv / dt) c = 10V / µs : VIsol = 1500V AC Unit: mm MAXIMUM RATINGS CHARA
- Part: SM25JZ51
- Manufacturer: Toshiba (official site)
- Size: 223.84 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| SM25GZ51 | Silicon Planar Epitaxial transistor |
| SM2G54 | BI?DIRECTIONAL TRIODE THYRISTOR |
| SM2GZ47 | BI-DIRECTIONAL TRIODE THYRISTOR |
| SM2GZ47A | BI-DIRECTIONAL TRIODE THYRISTOR |
| SM2JZ47 | BI-DIRECTIONAL TRIODE THYRISTOR |
SM25JZ51 Description
SM25GZ51,SM25JZ51 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE SM25GZ51,SM25JZ51 AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S On−State Current l High mutating (dv / dt) l Isolation Voltage : 5.9g ― ― 13−16A1A Note.