Datasheet4U Logo Datasheet4U.com

SSM3J56MFV - Silicon P-Channel MOSFET

Features

  • y, serious property damage or serious publ.

📥 Download Datasheet

Datasheet preview – SSM3J56MFV

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor
  • SSM3J01F - Silicon P-Channel MOSFET
  • SSM3J01T - TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
  • SSM3J02F - TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
  • SSM3J02T - TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
  • SSM3J05FU - Power Management Switch High Speed Switching Applications
  • SSM3J09FU - Silicon P-Channel MOSFET
  • SSM3J108TU - Field Effect Transistor Silicon P-Channel MOS Type
  • SSM3J109TU - Silicon P-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
SSM3J56MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J56MFV ○ Load Switching Applications • • 1.2 V drive Low ON-resistance:RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID (Note 1) IDP (Note 1) PD (Note 2) Power dissipation Channel temperature Storage temperature range PD (Note 3) t < 5s Tch Tstg Rating -20 ±8 -800 -1600 150 500 800 150 −55 to 150 °C °C mW Unit V V mA 1.Gate 2.Source 3.Drain VESM JEDEC ― Note: Using continuously under heavy loads (e.g.
Published: |