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SSM3K15ACT
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
SSM3K15ACT
Load Switching Applications
• 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V)
RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC Pulse
Power dissipation
Channel temperature
Storage temperature range
VDSS
30
V
VGSS
± 20
V
ID
100
mA
IDP
400
PD(Note 1)
100
mW
Tch
150
°C
Tstg
−55 to 150
°C
CST3
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.
SSM3K15ACT Datasheet
