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SSM3K15ACTC - Silicon N-Channel MOSFET

Key Features

  • (1) 2.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) 3. Packaging and Pin Assignment SSM3K15ACTC CST3C ©2016-2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-05 2017-11-30 Rev.2.0 SSM3K15ACTC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V D.

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MOSFETs Silicon N-Channel MOS (U-MOS) SSM3K15ACTC 1. Applications • Load Switches 2. Features (1) 2.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) 3. Packaging and Pin Assignment SSM3K15ACTC CST3C ©2016-2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-05 2017-11-30 Rev.2.0 SSM3K15ACTC 4.