SSM3K15AFU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
Load Switching Applications
- 2.5 V drive
- Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V)
RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage Gate-Source voltage
VDSS
VGSS
± 20
Drain current
Pulse
100 m A
Power dissipation Channel temperature Storage temperature range
PD(Note 1)
150 m W
Tch
°C
Tstg
- 55 to 150
°C
1. Gate 2. Source 3. Drain
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEDEC
― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
JEITA...
