Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
Load Switching Applications
- 2.5 V drive
- Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V)
Unit: mm
1.2±0.05 0.8±0.05
0.22±0.05
0.32±0.05
0.13±0.05...
