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SSM3K15AMFV - Silicon N-Channel MOSFET

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SSM3K15AMFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AMFV Load Switching Applications • 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Unit: mm 1.2±0.05 0.8±0.05 0.22±0.05 0.32±0.05 0.13±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain dissipation Channel temperature Storage temperature range Symbol Rating Unit VDSS 30 V VGSS ± 20 V ID 100 mA IDP 400 PD(Note 1) 150 mW Tch 150 °C Tstg −55 to 150 °C 1.2±0.05 0.8±0.05 0.4 0.4 1 3 2 0.5±0.05 VESM 1.Gate 2.Source 3.Drain Note: Using continuously under heavy loads (e.g.