SSM3K15FV - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	SSM3K15FV
Manufacturer	Toshiba Semiconductor
File Size	158.91 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K15FV Datasheet
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SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications Unit: mm 0.22±0.05 0.32±0.05 • Optimum for high-density mounting in small packages • Low on-resistance : RDS(ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) 1.2±0.05 0.8±0.05 0.4 0.4 1.2±0.05 0.8±0.05 1 3 Characteristics Symbol Rating Unit 2 0.13±0.05 Drain-source voltage Gate-source voltage Drain current Power dissipation Channel temperature Storage temperature VDS 30 V VGSS ±20 V DC ID Pulse IDP 100 mA 200 PD (Note 1) 150 mW Tch 150 °C Tstg −55 to 150 °C 0.5±0.05 VESM 1. Gate 2. Source 3. Drain Note: Using continuously under heavy loads (e.g.

Published: Feb 14, 2008 |