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SSM3K15FV
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15FV
High Speed Switching Applications Analog Switch Applications
Unit: mm
0.22±0.05
0.32±0.05
• Optimum for high-density mounting in small packages • Low on-resistance
: RDS(ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
1.2±0.05 0.8±0.05 0.4 0.4
1.2±0.05 0.8±0.05
1 3
Characteristics
Symbol
Rating
Unit
2
0.13±0.05
Drain-source voltage Gate-source voltage
Drain current
Power dissipation Channel temperature Storage temperature
VDS
30
V
VGSS
±20
V
DC
ID
Pulse
IDP
100 mA
200
PD (Note 1)
150
mW
Tch
150
°C
Tstg
−55 to 150
°C
0.5±0.05
VESM
1. Gate 2. Source 3. Drain
Note: Using continuously under heavy loads (e.g.
SSM3K15FV Datasheet
