SSM3K15FU Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications - Small package - Low on resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature VGSS ±20 100 m A PD(Note 1) 150 m W Tch °C Tstg - 55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm2 × 3) Unit: mm JEDEC ― JEITA SC-70 TOSHIBA...