The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSM3K15FS
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15FS
High Speed Switching Applications Analog Switching Applications
Unit: mm
• Compact package suitable for high-density mounting
• Low ON-resistance
: Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
30
V
Gate-Source voltage
VGSS
±20
V
DC Drain current
ID
100
mA
Pulse
IDP
200
Drain power dissipation (Ta = 25°C)
PD
100
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
―
high temperature/current/voltage and the significant change in temperature, etc.
SSM3K15FS Datasheet
