Click to expand full text
SSM3K15FS
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15FS
High Speed Switching Applications Analog Switching Applications
Unit: mm
• Compact package suitable for high-density mounting
• Low ON-resistance
: Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
30
V
Gate-Source voltage
VGSS
±20
V
DC Drain current
ID
100
mA
Pulse
IDP
200
Drain power dissipation (Ta = 25°C)
PD
100
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
―
high temperature/current/voltage and the significant change in temperature, etc.
SSM3K15FS Datasheet
