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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15F
SSM3K15F
High Speed Switching Applications Analog Switch Applications
• Small package • Low on resistance
: Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Unit: mm
+0.5 2.5-0.3
+0.25 1.5-0.15
+0.1 0.4-0.05
1
2
3
2.9±0.2 1.9 0.95 0.95
0.3 +0.1 0.16-0.06
Absolute Maximum Ratings (Ta = 25°C)
+0.2 1.1-0.1
Characteristics
Symbol
Rating
Unit
0~0.1
Drain-source voltage
VDS
30
V
Gate-source voltage
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature
VGSS ID IDP PD Tch Tstg
±20
V
100 mA
200
200
mW
150
°C
−55 to 150
°C
S-MINI JEDEC JEITA
1.Gate 2.Source 3.Drain
TO-236MOD SC-59
Note:
Using continuously under heavy loads (e.g.
SSM3K15F Datasheet
