Click to expand full text
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
SSM3K15AFU
Load Switching Applications
• 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V)
RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V)
SSM3K15AFU
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage Gate-Source voltage
VDSS
30
V
VGSS
± 20
V
Drain current
DC
ID
Pulse
IDP
100 mA
400
Power dissipation Channel temperature Storage temperature range
PD(Note 1)
150
mW
Tch
150
°C
Tstg
−55 to 150
°C
USM
1. Gate 2. Source 3. Drain
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.
SSM3K15AFU Datasheet
