SSM3K333R - Silicon N-Channel MOSFET

Toshiba

Key Features

(1) 4.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 28 mΩ (max) (@VGS = 10 V) 3. Packaging and Pin Assignment SOT-23F SSM3K333R 1: Gate 2: Source 3: Drain ©2021-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-10 2025-02-20 Rev.3.0 SSM3K333R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage.

SSM3K333R silicon n-channel mosfet by Toshiba - Datasheet Preview

Datasheet Details

Part number	SSM3K333R
Manufacturer	Toshiba
File Size	391.67 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K333R Datasheet

Full PDF Text Transcription for SSM3K333R (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SSM3K333R. For precise diagrams, and layout, please refer to the original PDF.

MOSFETs Silicon N-Channel MOS (U-MOS�-H) SSM3K333R 1. Applications • Power Management Switches • High-Speed Switching 2. Features (1) 4.5-V drive (2) Low drain-source on-...

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h-Speed Switching 2. Features (1) 4.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 28 mΩ (max) (@VGS = 10 V) 3. Packaging and Pin Assignment SOT-23F SSM3K333R 1: Gate 2: Source 3: Drain ©2021-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-10 2025-02-20 Rev.3.0 SSM3K333R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±20 Drain current (DC) (Note 1) ID 6.0 A Drain current (pulsed) (Note 1), (Note 2) IDP 12.

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