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SSM3K56FS Datasheet N-Channel MOSFET

Manufacturer: Toshiba

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Overview

SSM3K56FS MOSFETs Silicon N-Channel MOS SSM3K56FS 1.

Applications • High-Speed Switching 2.

Key Features

  • (1) (2) 1.5-V gate drive voltage. Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration 1: Gate 2: Source 3: Drain SSM Start of commercial production 1 2012-06 2014-04-04 Rev.2.0 SSM3K56FS 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Drain-source voltage Gate-source voltage Drain c.

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