SSM3K56ACT
SSM3K56ACT is Silicon N-Channel MOSFET manufactured by Toshiba.
MOSFETs Silicon N-Channel MOS
1. Applications
- High-Speed Switching
2. Features
(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V)
3. Packaging and Pin Configuration
CST3
1.Gate 2.Source 3.Drain
©2015-2022
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2015-11
2022-11-25 Rev.2.0
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