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SSM3K56ACT - Silicon N-Channel MOSFET

Key Features

  • (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration CST3 SSM3K56ACT 1.Gate 2.Source 3.Drain ©2015-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-11 2022-11-25 Rev.2.0 SSM3K56ACT 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta =.

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Datasheet Details

Part number SSM3K56ACT
Manufacturer Toshiba
File Size 248.95 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM3K56ACT Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS SSM3K56ACT 1. Applications • High-Speed Switching 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration CST3 SSM3K56ACT 1.Gate 2.Source 3.Drain ©2015-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-11 2022-11-25 Rev.2.0 SSM3K56ACT 4.