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SSM3K56MFV - Silicon N-Channel MOSFET

Key Features

  • (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration VESM SSM3K56MFV 1. Gate 2. Source 3. Drain Start of commercial production 2013-02 1 2014-04-04 Rev.2.0 SSM3K56MFV 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Drain-sourc.

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Datasheet Details

Part number SSM3K56MFV
Manufacturer Toshiba
File Size 197.14 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM3K56MFV Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS SSM3K56MFV 1. Applications • High-Speed Switching 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration VESM SSM3K56MFV 1. Gate 2. Source 3. Drain Start of commercial production 2013-02 1 2014-04-04 Rev.2.0 SSM3K56MFV 4.