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SSM3K7002AF - MOSFET

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SSM3K7002AF TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002AF High-Speed Switching Applications Analog Switch Applications • • Small package Low ON-resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V) 0.95 0.95 2.9±0.2 +0.5 2.5-0.3 +0.25 1.5-0.15 +0.1 0.4-0.05 3 0.3 +0.2 1.1-0.1 Unit: mm : Ron = 3.0 Ω (max) (@VGS = 10 V) 1 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP PD Tch Tstg Rating 60 ± 20 200 800 200 150 −55 to 150 Unit V V mA mW °C °C 1.9 Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range S-MINI JEDEC 1.Gate 2.Source 3.Drain TO-236MOD JEITA SC-59 Note: Using continuously under heavy loads (e.g.
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