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SSM3K7002AFU - MOSFET

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SSM3K7002AFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002AFU High-Speed Switching Applications Analog Switch Applications • • Small package Low ON-resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VGS = 10 V) 2.1±0.1 1.25±0.1 +0.1 0.3-0 3 0~0.1 Unit: mm 0.65 0.65 2.0±0.2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 60 ± 20 200 800 150 150 −55 to 150 Unit V V mA mW °C °C 1.3±0.1 1 2 0.90±0.1 Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Using continuously under heavy loads (e.g.
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