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SSM5P15FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM5P15FU
High Speed Switching Applications Analog Switch Applications
• Small package
• Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC Pulse
Power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
VDS
−30
V
VGSS
±20
V
ID
−100
mA
IDP
−200
PD (Note 1)
200
mW
Tch
150
°C
Tstg
−55 to 150
°C
1: Gate1 2: Source 3: Gate2 4: Drain2
5: Drain1
Note:
Using continuously under heavy loads (e.g.
SSM5P15FU Datasheet
