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SSM5P16FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
SSM5P16FU
High Speed Switching Applications Analog Switch Applications
Unit: mm • • Small package Low on-resistance : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.5 V)
(Q1, Q2 Common)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD(Note1) Tch Tstg Rating −20 ±10 −100 −200 200 150 −55~150 Unit V V mA mW °C °C
1: Gate1 2: Source 3: Gate2 4: Drain2 5: Drain1 JEDEC ―
Note: Using continuously under heavy loads (e.g.
SSM5P16FU Datasheet
