Datasheet Summary
MOSFETs Silicon P-/N-Channel MOS
1. Applications
- High-Speed Switching
2. Features
(1) 1.5-V drive (2) Low drain-source on-resistance
Q1 N-channel: RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 mA) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V, ID = 200 mA) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V, ID = 50 mA)
Q2 P-channel: RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V, ID = -800 mA) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V, ID = -500 mA) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V, ID = -200 mA) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V, ID = -100 mA) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V, ID = -10 mA)
3. Packaging and Internal Circuit
ES6
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