Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
High Speed Switching Applications
- Optimum for high-density mounting in small packages
- Low ON-resistance Q1: RDS(ON) = 395mΩ (max) (@VGS = 1.8 V)
Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V)
Q1...