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SSM6L14FE
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L14FE
○ Power Management Switch Applications ○ High-Speed Switching Applications
• N-ch: 1.5-V drive P-ch: 1.5-V drive
• N-ch, P-ch, 2-in-1 • Low ON-resistance Q1 N-ch:RDS(ON) = 330 mΩ (max) (@VGS = 2.5 V)
RDS(ON) = 240 mΩ (max) (@VGS = 4.5 V) Q2 P-ch:RDS(ON) = 440 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 300 mΩ (max) (@VGS = -4.5 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
1.6±0.05 1.0±0.05 0.5 0.5
Unit: mm 1.6±0.05 1.2±0.05
1
6
2
5
3
4
0.2±0.05
0.12±0.05
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
Drain current
DC Pulse
VDSS
20
V
VGSS
±10
V
ID
0.8
A
IDP
1.
SSM6L14FE Datasheet
