Datasheet Summary
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
○ Power Management Switch Applications ○ High-Speed Switching Applications
- N-ch: 1.5-V drive P-ch: 1.5-V drive
- N-ch, P-ch, 2-in-1
- Low ON-resistance Q1 N-ch:RDS(ON) = 330 mΩ (max) (@VGS = 2.5 V)
RDS(ON) = 240 mΩ (max) (@VGS = 4.5 V) Q2 P-ch:RDS(ON) = 440 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 300 mΩ (max) (@VGS = -4.5 V)
Q1...