Full PDF Text Transcription for SSM6L13TU (Reference)
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SSM6L13TU www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type SSM6L13TU Power Management Switch Applications High-Speed Switching Applicati...
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TU Power Management Switch Applications High-Speed Switching Applications • • • • • • 1.8 V drive P–ch , N–ch 2–in–1 Low ON–resistance: Pch : Nch 2.1±0.1 1.7±0.1 0.65 0.65 +0.1 0.3-0.05 Unit: mm 2.0±0.1 1.3±0.1 Ron = 460 mΩ (max) (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V) Ron = 235 mΩ (max) (@VGS = 1.8 V) Ron = 178 mΩ (max) (@VGS = 2.5 V) 1 2 3 6 5 4 Q1 Absolute Maximum Ratings (Ta = 25 °C) Drain-source voltage Gate-source voltage Drain current DC Pulse VDS VGSS ID IDP 20 ± 12 0.8 1.6 V V A 0.7±0.