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SSM6L13TU www.DataSheet4U.com
TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type
SSM6L13TU
Power Management Switch Applications High-Speed Switching Applications
• • • • • • 1.8 V drive P–ch , N–ch 2–in–1 Low ON–resistance: Pch : Nch
2.1±0.1 1.7±0.1 0.65 0.65 +0.1 0.3-0.05
Unit: mm
2.0±0.1
1.3±0.1
Ron = 460 mΩ (max) (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V) Ron = 235 mΩ (max) (@VGS = 1.8 V) Ron = 178 mΩ (max) (@VGS = 2.5 V)
1 2 3
6 5 4
Q1 Absolute Maximum Ratings (Ta = 25 °C)
Drain-source voltage Gate-source voltage Drain current DC Pulse VDS VGSS ID IDP 20 ± 12 0.8 1.6 V V A
0.7±0.
SSM6L13TU Datasheet
