Datasheet Summary
MOSFETs Silicon P-/N-Channel MOS
1. Applications
- Power Management Switches
- DC-DC Converters
2. Features
(1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V) Q2 P-channel: RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V)
3. Packaging and Internal Circuit
UDFN6
1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1
©2016 Toshiba Corporation
Start of mercial production
2015-12
2016-04-14 Rev.2.0
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