TC551001BPL-70L Datasheet PDF - Toshiba Semiconductor SILICON GATE CMOS STATIC RAM Specs

TC551001BPL-70L - SILICON GATE CMOS STATIC RAM

This page provides the datasheet information for the TC551001BPL-70L, a member of the TC551001 SILICON GATE CMOS STATIC RAM family.

Datasheet Summary

Description

The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply.

Features

with an operating current of 5mA/MHz (typ. ) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2µA typically. The TC551001BPL has three control inputs. Chip Enable inputs (CE1, CE2) allow for device selection and data retention control, while an Output Enable input (OE) provides fast memory access. The TC551001BPL is suitable for use in microprocessor.

Datasheet Details

Part number	TC551001BPL-70L
Manufacturer	Toshiba Semiconductor
File Size	729.98 KB
Description	SILICON GATE CMOS STATIC RAM
Datasheet	TC551001BPL-70L Datasheet
Additional preview pages of the TC551001BPL-70L datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com TOSHIBA TC551001BPL/BFL/BFTL/BTRL-70L/85L SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2µA typically. The TC551001BPL has three control inputs. Chip Enable inputs (CE1, CE2) allow for device selection and data retention control, while an Output Enable input (OE) provides fast memory access.

Published: Sep 23, 2016 |