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TC551001BTRL-70L - SILICON GATE CMOS STATIC RAM

Download the TC551001BTRL-70L datasheet PDF. This datasheet also covers the TC551001 variant, as both devices belong to the same silicon gate cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply.

Features

  • with an operating current of 5mA/MHz (typ. ) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2µA typically. The TC551001BPL has three control inputs. Chip Enable inputs (CE1, CE2) allow for device selection and data retention control, while an Output Enable input (OE) provides fast memory access. The TC551001BPL is suitable for use in microprocessor.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC551001_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
TC551001BTRL-70L SILICON GATE CMOS STATIC RAM Toshiba
TC551001BTRL-70 SILICON GATE CMOS STATIC RAM Toshiba
TC551001BTRL-10 SILICON GATE CMOS STATIC RAM Toshiba
TC551001BTRL-10L SILICON GATE CMOS STATIC RAM Toshiba
TC551001BTRL-85 SILICON GATE CMOS STATIC RAM Toshiba

Other Datasheets by Toshiba

Part Number Description
TC551001BTRL-85L SILICON GATE CMOS STATIC RAM
TC551001BFL-70L SILICON GATE CMOS STATIC RAM
TC551001BFL-85L SILICON GATE CMOS STATIC RAM
TC551001BFTL-70L SILICON GATE CMOS STATIC RAM
TC551001BFTL-85L SILICON GATE CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com TOSHIBA TC551001BPL/BFL/BFTL/BTRL-70L/85L SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2µA typically. The TC551001BPL has three control inputs. Chip Enable inputs (CE1, CE2) allow for device selection and data retention control, while an Output Enable input (OE) provides fast memory access.
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