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TC55257PL-85 - STATIC RAM

General Description

The TCSS257P is 262,144 bit static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 5V supply.

Key Features

  • with a operating current of 5mA/MHz(Typ. ) and minimum cycle time of 85ns. lfuen CE is a logical high, the device is placed in low power standby mode in which standby current is 2~A typically. The TCSS257P has two control inputs. Chip enable (CE) allow for device selection and data retention control, and an output enable input (OE) provides fast memory access. Thus the TCSS2S7P is suitable for use in various microprocessor.

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Other Datasheets by Toshiba

Part Number Description
TC55257PL-10 STATIC RAM
TC55257PL-12 STATIC RAM
TC55257P-10 STATIC RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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32,768 WORD X 8 BIT CMOS STATIC RAM SILICON GATE CMOS TC55257 PL-S5, TC55257 P-l O/PL-l 0 TC55257 P-12/PL-12 IDESCRIPTION I The TCSS257P is 262,144 bit static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 5V supply. Advanced circuit techniques provide both high speed and low power features with a operating current of 5mA/MHz(Typ.) and minimum cycle time of 85ns. lfuen CE is a logical high, the device is placed in low power standby mode in which standby current is 2~A typically. The TCSS257P has two control inputs. Chip enable (CE) allow for device selection and data retention control, and an output enable input (OE) provides fast memory access.