Datasheet Details
| Part number | TC55V16256JI-15 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 223.48 KB |
| Description | MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
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Download the TC55V16256JI-15 datasheet PDF. This datasheet also includes the TC55V16256FTI-12 variant, as both parts are published together in a single manufacturer document.
| Part number | TC55V16256JI-15 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 223.48 KB |
| Description | MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| Datasheet |
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|
|
|
The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits.
Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply.
Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access.
TC55V16256JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC.
| Part Number | Description |
|---|---|
| TC55V16256JI-12 | MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55V16256J-12 | 16-BIT CMOS STATIC RAM |
| TC55V16256J-15 | 16-BIT CMOS STATIC RAM |
| TC55V16256FT-12 | 16-BIT CMOS STATIC RAM |
| TC55V16256FT-15 | 16-BIT CMOS STATIC RAM |
| TC55V16256FTI-12 | MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55V16256FTI-15 | MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC55V16100FT-10 | MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS |
| TC55V16100FT-12 | MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS |
| TC55V16100FT-15 | MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS |