This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | TC55VZM216AFTN08 |
|---|---|
| Datasheet | TC55VZM216AFTN08 TC55VZM216AJJN Datasheet (PDF) |
| File Size | 208.86 KB |
| Manufacturer | Toshiba |
| Description | 16-BIT CMOS STATIC RAM |
|
|
The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access.
| Part Number | Description |
|---|---|
| TC55VZM216AFTN10 | 16-BIT CMOS STATIC RAM |
| TC55VZM216AFTN12 | 16-BIT CMOS STATIC RAM |
| TC55VZM216AJJN | 16-BIT CMOS STATIC RAM |
| TC55V16100FT-10 | MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS |
| TC55V16100FT-12 | MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS |
| TC55V16100FT-15 | MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS |
| TC55V16100FTI-12 | MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS |
| TC55V16100FTI-15 | MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS |
| TC55V16256FT-12 | 16-BIT CMOS STATIC RAM |
| TC55V16256FT-15 | 16-BIT CMOS STATIC RAM |
