* Fast access time (the following are maximum values) TC55VZM216AJJN/AFTN08:8 ns TC55VZM216AJJN/AFTN10:10 ns TC55VZM216AJJN/AFTN12:12 ns Low-power dissipation (IDDO2).

where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL compatible. The T.

The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V po.

TC55VZM216AFTN10

TC55VZM216AFTN12

TC55VZM216AJJN

TC55V020FT

TC55V020TR

TC55V040AFT

TC55V040ATR

TC55V040FT

TC55V040TR

TC55V1001A

TC55V1001AF

TC55V1001F

TC55V1001S