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TC55VZM216AFTN08 Datasheet 16-BIT CMOS STATIC RAM

Manufacturer: Toshiba

Download the TC55VZM216AFTN08 datasheet PDF. This datasheet also includes the TC55VZM216AJJN variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (TC55VZM216AJJN_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits.

Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power supply.

Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access.

Overview

TC55VZM216AJJN/AFTN08,10,12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC.

Key Features

  • Fast access time (the following are maximum values) TC55VZM216AJJN/AFTN08:8 ns TC55VZM216AJJN/AFTN10:10 ns TC55VZM216AJJN/AFTN12:12 ns Low-power dissipation (IDDO2) (the following are maximum values) Cycle Time Operation (max) 8 140 10 130 12 120 ns mA.
  • Single power supply voltage of 3.3 V ± 0.3 V Fully static operation All inputs and outputs are LVTTL compatible Output buffer control using OE Data byte control usi.

More Datasheets from Toshiba

Part Number Description
TC55VZM216AFTN10 16-BIT CMOS STATIC RAM
TC55VZM216AFTN12 16-BIT CMOS STATIC RAM
TC55VZM216AJJN 16-BIT CMOS STATIC RAM
TC55V16100FT-10 MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS
TC55V16100FT-12 MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS
TC55V16100FT-15 MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS
TC55V16100FTI-12 MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS
TC55V16100FTI-15 MOS DIGITAL INTERGRATED CIRCUIT SILICON GATE CMOS
TC55V16256FT-12 16-BIT CMOS STATIC RAM
TC55V16256FT-15 16-BIT CMOS STATIC RAM