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TC58FVT321 Datasheet Silicon Gate CMOS

Manufacturer: Toshiba

Overview: TC58FVT321/B321FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits.

The TC58FVT321/B321

Key Features

  • commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT321/B321 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.

More Datasheets from Toshiba

Part Number Description
TC58FVT004 4M (512K x 8) BIT CMOS FLASH MEMORY
TC58FVT160 16-MBIT CMOS FLASH MIMORY
TC58FVT160A SILICON GATE CMOS
TC58FVT400 4-MBIT CMOS FLASH MEMORY
TC58FVT641 (TC58Fxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58FVT800 (TC58Fxxx) 8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
TC58FV321 (TC58Fxxx) 32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY
TC58FVB160A SILICON GATE CMOS
TC58FVB400 4-MBIT CMOS FLASH MEMORY
TC58F1001F-10 131072 WORD x 8 BIT CMOS FLASH E2PROM

TC58FVT321 Distributor