TC58FVT321
Key Features
- Power supply voltage VDD = 2.7 V~3.6 V Operating temperature Ta = -40°C~85°C Organization 4M × 8 bits / 2M × 16 bits Functions Simultaneous Read/Write Auto Program, Auto Erase Fast Program Mode / Acceleration Mode Program Suspend/Resume Erase Suspend/Resume data polling / Toggle bit block protection, boot block protection Automatic Sleep, support for hidden ROM area common flash memory interface (CFI) Byte/Word Modes * * * * *
- Block erase architecture 8 × 8 Kbytes / 63 × 64 Kbytes Boot block architecture TC58FVT321FT/XB: top boot block TC58FVB321FT/XB: bottom boot block Mode control Compatible with JEDEC standard commands Erase/Program cycles 105 cycles typ. Access time 70 ns (CL: 30 pF) 100 ns (CL: 100 pF) Power consumption 10 µA (Standby) 30 mA (Read operation) 15 mA (Program/Erase operations) Package TC58FVT321/B321FT: TSOPI48-P-1220-0.50 (weight: 0.51 g) TC58FVT321/B321XB: P-TFBGA56-0710-0.80AZ (weight: 0.125 g)
- 000630EBA1
- TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when uti
