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TC58FVT321 - SILICON GATE CMOS

Download the TC58FVT321 datasheet PDF. This datasheet also covers the TC58FVT321XB-70 variant, as both devices belong to the same silicon gate cmos family and are provided as variant models within a single manufacturer datasheet.

General Description

The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits.

Key Features

  • commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT321/B321 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC58FVT321XB-70_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
TC58FVB004 4M (512K x 8) BIT CMOS FLASH MEMORY Toshiba
TC58FVB160 16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY Toshiba
TC58FVB321 32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY Toshiba
TC58FVB641 64-MBIT (8M x 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY Toshiba
TC58FVB800 8 MBIT (1M x 8 BITS / 512K x 16 BITS) CMOS FLASH MEMORY Toshiba

Other Datasheets by Toshiba

Part Number Description
TC58FVT004 4M (512K x 8) BIT CMOS FLASH MEMORY
TC58FVT160 16-MBIT CMOS FLASH MIMORY
TC58FVT160A SILICON GATE CMOS
TC58FVT400 4-MBIT CMOS FLASH MEMORY
TC58FVT641 (TC58Fxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TC58FVT321/B321FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits. The TC58FVT321/B321 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT321/B321 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. FEATURES • • • • Power supply voltage VDD = 2.7 V~3.