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TC58FVT321

Manufacturer: Toshiba

This datasheet includes multiple variants, all published together in a single manufacturer document.

TC58FVT321 datasheet preview

Datasheet Details

Part number TC58FVT321
Datasheet TC58FVT321 TC58FVT321XB-70 Datasheet (PDF)
File Size 560.08 KB
Manufacturer Toshiba
Description SILICON GATE CMOS
TC58FVT321 page 2 TC58FVT321 page 3

TC58FVT321 Overview

The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits. The.

TC58FVT321 Key Features

  • Power supply voltage VDD = 2.7 V~3.6 V Operating temperature Ta = -40°C~85°C Organization 4M × 8 bits / 2M × 16 bits Fun
  • 000630EBA1
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devic
  • The Toshiba products listed in this document are intended for usage in general electronics
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More Datasheets from Toshiba

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Part Number Description
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TC58FVT400 4-MBIT CMOS FLASH MEMORY
TC58FVT641 (TC58Fxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58FVT800 (TC58Fxxx) 8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
TC58FV321 (TC58Fxxx) 32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY
TC58FVB160A SILICON GATE CMOS
TC58FVB400 4-MBIT CMOS FLASH MEMORY
TC58F1001F-10 131072 WORD x 8 BIT CMOS FLASH E2PROM

TC58FVT321 Distributor

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