TG2216TU Datasheet - Toshiba Semiconductor

GaAs Linear Integrated Circuit GaAs Monolithic

TG2216TU Features

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* Low insertion Loss: LOSS = 0.5dB (typ.) @1.0 GHz = 0.7dB (typ.) @2.5 GHz High isolation: ISL = 25dB (typ.) @1.0 GHz = 23dB (typ.) @2.5 GHz High linearly: Pi1dB = 28dBmW (typ.) @2.5 GHz Low voltage operation: VCON = 0 V/2.7 V Small package: UF6 pack

TG2216TU General Description

RF port. When VC1 = Hi and VC2 = Lo, this port is connected to RFcom. An external DC blocking capacitor (C1) is required for internal DC bias blocking. GND port. The distance between this pin and ground pattern should be as short as possible for RF performance. RF port. When VC1 = Lo and VC2 = Hi, t.

TG2216TU Datasheet (237.42 KB)

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Datasheet Details

Part number:

TG2216TU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

237.42 KB

Description:

Gaas linear integrated circuit gaas monolithic.
TG2216TU TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2216TU RF SPDT Switch Antenna switches for Bluetooth Class1, wireless LAN and PHS F.

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TG2216TU GaAs Linear Integrated Circuit GaAs Monolithic Toshiba Semiconductor

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TG2216TU Features

TG2216TU General Description

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