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TG2211FT - GaAs Linear Integrated Circuit GaAs Monolithic

Datasheet Summary

Description

Pin No.

RF pin.

Connect to RFcom when Vcon goes High.

Features

  • www. DataSheet4U. com.
  • Fewer external parts: On-chip inverter circuit.
  • Low insertion Loss: LOSS = 0.45dB (typ. ) @1.0 GHz = 0.55dB (typ. ) @2.5 GHz.
  • High isolation: ISL = 25dB (typ. ) @1.0 GHz = 24dB (typ. ) @2.5 GHz.
  • Low voltage operation: VCON = 0 V/2.7 V.
  • Small package: TU6 package (mold size = 2.0 × 1.25 × 0.6 mm) Weight: 0.008 g (typ. ) Pin Connection and Marking (top view) Equivalent Circuit VCON RFcom 6 5 VDD 4 VCON RFcom 6 5 VDD 4 UM 1 2 3 RF1 GND RF2 1.

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Datasheet Details

Part number TG2211FT
Manufacturer Toshiba Semiconductor
File Size 236.62 KB
Description GaAs Linear Integrated Circuit GaAs Monolithic
Datasheet download datasheet TG2211FT Datasheet
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Full PDF Text Transcription

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TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2211FT RF SPDT Switch TG2211FT Antenna switches for Bluetooth class 2 and 3 Switch the diversity antenna Switch the receive filter for mobile communication Switch the local signal Features www.DataSheet4U.com · Fewer external parts: On-chip inverter circuit · Low insertion Loss: LOSS = 0.45dB (typ.) @1.0 GHz = 0.55dB (typ.) @2.5 GHz · High isolation: ISL = 25dB (typ.) @1.0 GHz = 24dB (typ.) @2.5 GHz · Low voltage operation: VCON = 0 V/2.7 V · Small package: TU6 package (mold size = 2.0 × 1.25 × 0.6 mm) Weight: 0.008 g (typ.
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