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TG2216TU - GaAs Linear Integrated Circuit GaAs Monolithic

Datasheet Summary

Description

RF port.

When VC1 = Hi and VC2 = Lo, this port is connected to RFcom.

An external DC blocking capacitor (C1) is required for internal DC bias blocking.

Features

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  • Low insertion Loss: LOSS = 0.5dB (typ. ) @1.0 GHz = 0.7dB (typ. ) @2.5 GHz High isolation: ISL = 25dB (typ. ) @1.0 GHz = 23dB (typ. ) @2.5 GHz High linearly: Pi1dB = 28dBmW (typ. ) @2.5 GHz Low voltage operation: VCON = 0 V/2.7 V Small package: UF6 package (2.0 × 2.1 × 0.7 mm) Weight: 0.007g (typ. ) Pin Connection and Marking (top view) VC1 6 RFcom 5 VC2 4 Equivalent Circuit VC1 6 RFcom 5 VC2 4 US 1 RF1 2 GND 3 RF2 1 RF1 2 GND 3 RF2 Maximum Ratin.

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Datasheet Details

Part number TG2216TU
Manufacturer Toshiba Semiconductor
File Size 237.42 KB
Description GaAs Linear Integrated Circuit GaAs Monolithic
Datasheet download datasheet TG2216TU Datasheet
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Full PDF Text Transcription

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TG2216TU TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2216TU RF SPDT Switch Antenna switches for Bluetooth Class1, wireless LAN and PHS Filter switching for mobile communication Features www.DataSheet4U.com · · · · · Low insertion Loss: LOSS = 0.5dB (typ.) @1.0 GHz = 0.7dB (typ.) @2.5 GHz High isolation: ISL = 25dB (typ.) @1.0 GHz = 23dB (typ.) @2.5 GHz High linearly: Pi1dB = 28dBmW (typ.) @2.5 GHz Low voltage operation: VCON = 0 V/2.7 V Small package: UF6 package (2.0 × 2.1 × 0.7 mm) Weight: 0.007g (typ.
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