TIM1011-4L Description
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-4L TECHNICAL DATA.
TIM1011-4L Key Features
- HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz
- HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz
- BROAD BAND INTERNALLY MATCHED FET
- HERMETICALLY SEALED PACKAGE
- P1dB) x Rth(c-c)