TIM1011-4UL Datasheet | Toshiba

Features ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 9.5dB at 10.7GHz to 11.7GHz ･LOW INTERMODULATION DISTOTION IM3=-45dBc at Pout= 24.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain pression Point Power Gain at 1dB Gain pression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS1 VDS= 10V IDSset= 1.0A f=10.7 to 11.7 GHz UNIT dBm dB Gain Flatness G dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 24.0dBm, f=...