TIM1011-4L Datasheet | Toshiba

.. MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA Features - HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz - HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz - BROAD BAND INTERNALLY MATCHED FET - HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain pression Point Power Gain at 1dB Gain pression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ΔG ( Ta= 25°C ) UNIT dBm dB A dB % dBc A °C MIN. 35.5 6.5 ⎯ ⎯ ⎯ -42 ⎯ ⎯ TYP. MAX. 36.5 ⎯ 7.5 1.7 ⎯ 24 -45 1.7 ⎯ ⎯ 2.2 ±0.8 ⎯ ⎯ 2.2 70 CONDITIONS VDS=...