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TIM1011-4L - MICROWAVE POWER GaAs FET

Datasheet Summary

Features

  • HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz.
  • HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz.
  • BROAD BAND.

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Datasheet Details

Part number TIM1011-4L
Manufacturer Toshiba Semiconductor
File Size 181.74 KB
Description MICROWAVE POWER GaAs FET
Datasheet download datasheet TIM1011-4L Datasheet
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www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-4L TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz „ HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ΔG ( Ta= 25°C ) UNIT dBm dB A dB % dBc A °C MIN. 35.5 6.5 ⎯ ⎯ ⎯ -42 ⎯ ⎯ TYP. MAX. 36.5 ⎯ 7.5 1.7 ⎯ 24 -45 1.7 ⎯ ⎯ 2.2 ±0.8 ⎯ ⎯ 2.2 70 CONDITIONS VDS= 9V f= 10.7 to 11.7GHz ηadd IM3 IDS2 ΔTch Two-Tone Test Po=25.
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