TIM5964-25UL Datasheet | Toshiba

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1d B= 44.5d Bm at 5.9GHz to 6.4GHz ･HIGH GAIN G1d B= 10.0d B at 5.9GHz to 6.4GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER Ga As FET RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1d B Gain pression Point Power Gain at 1d B Gain pression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1d B G1d B IDS1 G VDS= 10V IDSset= 5.2A f = 5.9 to 6.4GHz UNIT d Bm d B A d B Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test d Bc Po= 33.5d Bm, ∆f= 5MHz (Single Carrier Level) Channel Temperature Rise Tch (VDS X IDS + Pin - P1d B) X Rth(c-c) °C Remended Gate Resistance(Rg): 28  MIN. 43.5 9.0    -44   TYP....