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TIM5964-60SL - MICROWAVE POWER GaAs FET

Features

  • ･BROAD BAND.

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Datasheet Details

Part number TIM5964-60SL
Manufacturer Toshiba
File Size 418.52 KB
Description MICROWAVE POWER GaAs FET
Datasheet download datasheet TIM5964-60SL Datasheet
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FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 48.0dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 8.5dB at 5.9GHz to 6.4GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 36.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-60SL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 9.5A f = 5.9 to 6.4GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 36.
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