TIM5964-60SL-422 Datasheet | Toshiba

MICROWAVE POWER GaAs FET Features ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 48.0dBm at 5.85GHz to 6.75GHz ŋHIGH GAIN G1dB= 8.0dB at 5.85GHz to 6.75GHz ŋLOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 36.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain pression Point Power Gain at 1dB Gain pression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 9.5A f= 5.85 to 6.75GHz Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch Two-Tone Test Po= 36.5dBm, f=...