TIM5964-8UL Datasheet | Toshiba

MICROWAVE POWER GaAs FET Features ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain pression Point Power Gain at 1dB Gain pression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 ∆G VDS= 10V IDSset= 1.8A f = 5.9 to 6.4GHz UNIT dBm dB A dB Power Added Efficiency ηadd % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 28.5dBm, ∆f= 5MHz (Single Carrier Level) Channel Temperature Rise ∆Tch (VDS X IDS + Pin - P1dB) X...