Click to expand full text
MICROWAVE POWER GaAs FET
TIM5964-8UL
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 39.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN
G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 ∆G
VDS= 10V IDSset= 1.8A f = 5.9 to 6.4GHz
UNIT dBm dB
A dB
Power Added Efficiency
ηadd
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 28.5dBm, ∆f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
∆Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 150 Ω
MIN. 38.5 9.0 -44
TYP. MAX.
39.
TIM5964-8UL Datasheet
