TIM5964-80SL Datasheet | Toshiba

MICROWAVE POWER.. GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA Features - LOW INTERMODULATION DISTORTION IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level - HIGH POWER P1dB=49.0dBm at 5.9GHz to 6.4GHz - HIGH GAIN G1dB=7.0dB at 5.9GHz to 6.4GHz - BROAD BAND INTERNALLY MATCHED FET - HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain pression Point Power Gain at 1dB Gain pression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ΔG ( Ta= 25°C ) UNIT dBm dB A dB % dBc A °C MIN. 48.0 6.0 ⎯ ⎯ ⎯ -25 ⎯ ⎯...