TIM5964-80SL - MICROWAVE POWER GaAs FET

Features

LOW.

Toshiba Semiconductor

Datasheet Details

Part number	TIM5964-80SL
Manufacturer	Toshiba
File Size	142.04 KB
Description	MICROWAVE POWER GaAs FET
Datasheet	TIM5964-80SL Datasheet
Additional preview pages of the TIM5964-80SL datasheet.

📁 Similar Datasheet

TIM5964-8UL - MICROWAVE POWER GaAs FET (Toshiba)
TIM5964-16SL-422 - MICROWAVE POWER GaAs FET (Toshiba)
TIM5964-30UL - MICROWAVE POWER GaAs FET (Toshiba)
TIM5964-35SLA-422 - MICROWAVE POWER GaAs FET (Toshiba)
TIM5964-4SL-422 - MICROWAVE POWER GaAs FET (Toshiba)
TIM5964-60SL-422 - MICROWAVE POWER GaAs FET (Toshiba)
TIM5359-16UL - MICROWAVE POWER GaAs FET (Toshiba)
TIM5359-4UL - MICROWAVE POWER GaAs FET (Toshiba)
TIM-LC - GPS Receiver (uBlox)
TIM-LH - GPS Receiver Module (uBlox)

Other Datasheets by Toshiba Semiconductor

TIM5964-8 - MICROWAVE POWER GAAS FET
TIM5964-12UL - MICROWAVE POWER GaAs FET
TIM5964-16SL - MICROWAVE POWER GaAs FET
TIM5964-16UL - MICROWAVE POWER GaAs FET
TIM5964-25UL - MICROWAVE POWER GaAs FET
TIM5964-30SL - MICROWAVE POWER GaAs FET
TIM5964-35SLA - MICROWAVE POWER GaAs FET
TIM5964-35SLA-251 - MICROWAVE POWER GaAs FET

Full PDF Text Transcription

Click to expand full text

MICROWAVE POWERwww.DataSheet4U.com GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-80SL TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level HIGH POWER P1dB=49.0dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=7.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ΔG ( Ta= 25°C ) UNIT dBm dB A dB % dBc A °C MIN. 48.0 6.0 ⎯ ⎯ ⎯ -25 ⎯ ⎯ TYP. MAX. 49.0 ⎯ 7.0 18.0 ⎯ 35 -30 ⎯ ⎯ ⎯ 20.0 ±0.8 ⎯ ⎯ 16.0 100 CONDITIONS VDS= 10V IDSset≅10.

Published: Feb 22, 2010 |