TIM5964-80SL Description
GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-80SL TECHNICAL DATA.
TIM5964-80SL Key Features
- LOW INTERMODULATION DISTORTION IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level
- HIGH POWER P1dB=49.0dBm at 5.9GHz to 6.4GHz
- HIGH GAIN G1dB=7.0dB at 5.9GHz to 6.4GHz
- BROAD BAND INTERNALLY MATCHED FET
- HERMETICALLY SEALED PACKAGE